AIBRIEF
The agreement spans next generation High Bandwidth Memory (HBM) chips, 2 nanometer and below chip manufacturing, and advanced chip stacking packaging for Broadcom's custom AI accelerators.
Samsung Electronics and Broadcom signed a memorandum of understanding at the AI Summit at The Midway in San Francisco this week, projecting the collaboration to be worth more than US$200 billion through 2030. The deal is structured around three technology legs: next-generation High Bandwidth Memory (HBM), Samsung's 2-nanometer-and-below foundry process, and 2.3D/2.5D advanced packaging. That trio underpins the custom AI accelerators (ASICs) that Broadcom designs for large technology customers (Samsung newsroom).
The $200 billion is a five-year expectation, not a signed contract value, and no independent third party has yet confirmed the figure. Foundry scope also covers Broadcom's Wireless Broadband Communications chips, the joint release said.
Broadcom designs custom AI silicon for hyperscalers, and Samsung is using the deal to court more of that contract manufacturing (foundry) work, much of which TSMC still handles as the advanced-node leader in customer breadth and yield, according to wire reporter Anabelle Colaco (Bostonstar). One MOU does not redraw the foundry map; Samsung remains the underdog on advanced-node share.
Vice Chairman Young Hyun Jun, who heads Samsung's Device Solutions Division, and Broadcom's Charlie Kawwas signed on the companies' behalf.